|
|
Publications in Math-Net.Ru
-
Phase transformations of amorphous binary semiconductor under pulsed laser irradiation
Fizika Tverdogo Tela, 33:1 (1991), 99–103
-
CONDITIONS OF GAAS(100) GALLIUM-STABILIZED SURFACE DURING MOLECULAR-BEAM
EPITAXY
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:24 (1991), 94–98
-
STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO
SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM
MOLECULAR-BEAMS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 42–44
-
LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY
METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991), 31–34
-
POTENTIAL MECHANISM OF COLD NUCLEAR SYNTHESIS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990), 91–94
-
DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED
SILICON LAYERS UNDER NANOSECOND LASER-PULSES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 13–17
-
LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF
GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989), 67–69
-
Melting of Semiconductors by Pulsed Laser Radiation (Review)
Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 1945–1969
-
Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1119–1122
-
The effect of nanosecond laser-pulses on the melting of graphite and diamonds
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 921–924
-
The effect of nanosecond laser-pulses on indium-phosphide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 916–920
-
Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985), 761–765
-
Induced Mandelshtam-Brillouin scattering and ultrasound amplification with light at forward scattering
Fizika Tverdogo Tela, 26:6 (1984), 1735–1738
-
LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE
SUBNANOSECOND LASER-PULSE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1281–1286
-
Free charge carrier effect on the stimulated Mandelshtam-Brillouin scattering in piezoelectrics at a steady electric field
Fizika Tverdogo Tela, 25:9 (1983), 2802–2804
-
Новый фазовый переход в SiC и GaAs под действием пикосекундных
лазерных импульсов
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983), 1373–1376
-
О возможностях метода фотолюминесценции в исследовании лазерной
аморфизации арсенида галлия
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983), 1298–1301
© , 2024