Gruzdov Vladimir Grigoryevich

Publications in Math-Net.Ru

1. Исследование особенностей переноса носителей в гетероструктурах с тонкими активными областями
   
   Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1287–1290
2. Концентрация и подвижность электронов в InP и In$_{0.53}$Ga$_{0.47}$As, легированных редкоземельными элементами
   
   Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  35–43
3. Pbotoluminescent Studies of Carrier Trapping into the Quantum Well of InGaAsP/InP Double Heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1983–1988
4. Spin Splitting of the Conduction Band in InP
   
   Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  347–350
5. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION
   
   Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
6. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP
   
   Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
7. INFLUENCE OF TECHNOLOGICAL FACTORS ON LUMINESCENT CHARACTERISTICS OF INGAASP/INP(LAMBDA=1.55MKM) HETEROLASERS
   
   Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2047–2050
8. Обратные токи в $p{-}n$-гетероструктурах InGaAsP/InP
   
   Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2036–2040
9. Влияние несоответствия параметров решеток на $I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур
   
   Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1413–1416
10. Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1034–1038
11. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297