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Publications in Math-Net.Ru
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Изовалентное легирование фосфида индия галлием и мышьяком в процессе
жидкофазной эпитаксии
Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1737–1741
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Плазмон-фононные моды и непараболичность зоны проводимости
в эпитаксиальных слоя InGaAs/InP
Fizika i Tekhnika Poluprovodnikov, 25:7 (1991), 1146–1156
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FIELD TRANSISTORS WITH THE SCHOTTKY-BARRIER ON INGAAS/INP
HETEROSTRUCTURES
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989), 30–34
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HIGH-EFFICIENT THIN-FILM SOLAR ELEMENTS (TSE) FOR THE CONVERSION OF
CONCENTRATED RADIATION
Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987), 1805–1810
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Thin-film $Al\,Ga\,As-Ga\,As$ solar photoelements for the transformation of concentrated solar-radiation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:19 (1986), 1197–1202
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Emitting properties of $Ga\,As$ epitaxial layers separated from sublayers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 550–553
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THIN-FILM SOLAR ELEMENTS (TSE) ON (AL, GA)AS HETEROJUNCTIONS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984), 455–459
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