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Publications in Math-Net.Ru
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AG-SI INTERPHASE, FORMED UNDER SIMULTANEOUS DEPOSITION AND IRRADIATION
OF HIGH-ENERGY IONS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:21 (1988), 1995–1998
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Diagnostics of surface electric-conductivity of zinc-oxide films by surface acoustic-waves during ion irradiation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987), 994–997
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Effect of Implantation Dose on Recrystallization of Poly-Si Layers by a CO$_2$ Continuous-Wave Laser
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 393–397
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Element component rupture in $Si\,O_2$ during ion-activated chemical etching
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:24 (1985), 1512–1515
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Kinetics of integral mechanical-stress induction in implanted silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:21 (1985), 1312–1314
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ANISOTROPY-FIELD AND NEEL TEMPERATURE OF IMPLANTED FERRITE-GARNET FILMS
Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2287–2288
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Variation of Paramagnetic-Center Concentration
in $a$-Si Films Deposited in Vacuum under Ionic Irradiation
Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1191–1193
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Nitrogen implantation effect on the critical temperature of superconducting aluminum films
Fizika Tverdogo Tela, 25:8 (1983), 2492–2494
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