Bakhadyrkhanov M K

Publications in Math-Net.Ru

1. Gettering properties of nickel in silicon photocells
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1685–1688
2. Physical foundations of the formation of the silicon-based heterovarizonic structure
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1678–1684
3. Optimal conditions for nickel doping to improve the efficiency of silicon photoelectric cells
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  981–986
4. Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  489–492
5. The effect of negative magnetoresistance in silicon to create multifunctional sensors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  7–11
6. An infrared radiation photoresistor based on silicon with nanoclusters of manganese atoms
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  12–15
7. Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  37–40
8. Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material
   
   Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019),  421–425
9. Studying the effect of doping with nickel on silicon-based solar cells with a deep $p$–$n$-junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  3–6
10. IR photodetectors operating under background illumination
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  140–142
11. Низкочастотные колебания тока в компенсированном цинком кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1536–1539
12. Влияние плотности атомов диффузанта на коэффициент диффузии и концентрацию электроактивных атомов серы в кремнии
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:4 (1992),  52–54
13. Определение профиля концентрации марганца и никеля, имплантированных в кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1952–1956
14. Возбуждение рекомбинационных волн в кремнии, компенсированном марганцем при одноосной упругой деформации
    
    Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1731–1736
15. EFFECT OF ELASTICITY OF DIFFUSANT VAPORS ON CONCENTRATION OF ELECTROACTIVE ATOMS AND DEGREE OF COMPENSATION OF SI(ZN) MODELS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:12 (1991),  1–4
16. Влияние никеля на образование термодоноров в монокристаллах кремния
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2202–2203
17. Неустойчивость тока в кремнии, компенсированном марганцем, связанная с рекомбинационными волнами
    
    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1646–1650
18. Распад твердого раствора Si$\langle\text{Mn}\rangle$ при всестороннем гидростатическом сжатии
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  123–128
19. Effect of Axial Compression on Current–Voltage Characteristics of Manganese-Doped Silicon Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1710–1712
20. Some Characteristic Properties of Interaction between Impurity Centers and Deep Donor Levels in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1456–1459
21. Dynamic Chaotic State and Hysteresis of Auto-Oscillations in Si$\langle$Mn$\rangle$ due to Temperature-Electric Instability
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1400–1403
22. Auto-Oscillations of Corrent in Sulphur-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1315–1317
23. Effect of Ellastic Compression in the [100] Direction on the Parameters of ТЕI in Manganese-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1561–1564
24. Effect of a Magnetic Field on Temperature-Electric Instability in Manganese-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  423–426
25. Piezoeffect and Hall Effect in $p$-Type Si$\langle\text{Mn}\rangle$ under Uniaxial Elastic Deformation
    
    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2052–2054
26. Низкочастотные колебания тока с большой амплитудой в компенсированном марганцем кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2220–2222
27. Влияние $\gamma$-облучения на электрические и фотоэлектрические свойства компенсированного марганцем кремния
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  973–976