Lantratov Vladimir Mikhailovich

Publications in Math-Net.Ru

1. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
   
   Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
2. Фотолюминесцентные свойства GaAs, легированного рением
   
   Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1194–1199
3. Reduction of surface recombination current in R-P $Al\,Ga\,As/Ga\,As$ transitions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:24 (1987),  1481–1485
4. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
5. Theory of Photoelectric Converter with Energy-Gap Gradient in the Space-Charge Region of Hetero-$p{-}n$-Junction
   
   Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1262–1270
6. High-Efficiency Information-Energy AlGaAs-GaAs Photoreceivers for Fiber-Optical Communication Lines
   
   Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  435–439
7. BEHAVIOR OF ALGAAS HETEROPHOTOELEMENTS AT LOW (10(-1)-10(-3)VT-CM2) EXPOSURE LEVEL AT THE 173-373-K TEMPERATURE-RANGE
   
   Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2004–2009
8. Sublinearity of Capacity–Voltage Characteristics of Sharp Asymmetric $p{-}n$ Junctions
   
   Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1589–1596
9. Heterophotocells with Low Value of Saturation Back Current
   
   Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  276–281
10. SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION POSITION
    
    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1658–1660
11. Эффективный перенос возбуждения из эмиттера в активную область при фотолюминесценции InGaAsP/InP ДГС
    
    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2168–2172