Andreev Igor Anatol'evich

Publications in Math-Net.Ru

1. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
2. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
3. Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  677–683
4. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
5. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
6. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
7. Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons
   
   Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017),  315–318
8. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1196–1201
9. Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1420–1424
10. UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL RANGE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  50–53
11. Лавинное умножение и коэффициенты ионизации в GaInAsSb
    
    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1429–1436
12. UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  27–32
13. LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  71–76
14. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
15. GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  986–991
16. CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988),  389–393
17. Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987),  481–485
18. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
19. Dark Currents in GaAlSb(As) Diode Structures of «Resonant» Composition
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1605–1611
20. Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  545–547
21. NEW PIEZOELECTRIC LANGASIT LA3GA5SIO14-MATERIAL WITH ZERO TEMPERATURE-COEFFICIENT OF ELASTIC OSCILLATION PARTICLES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984),  487–491
22. WEAK TEMPERATURE-DEPENDENCE OF ELASTIC PLIABILITY S11 AND S44 OF A BA0.39SR0.61NB2O6 CRYSTAL NEAR THE 20-DEGREES-C
    
    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1632–1635


23. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476