Danl'chenko V G

Publications in Math-Net.Ru

1. GENERATION AND REGISTRATION OF PICOSECOND OPTICAL PULSES IN INGAASP/INP (LAMBDA= 1.5-1.6 MU-M) LASERS WITH PASSIVE QUALITY MODULATION
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:13 (1989),  6–9
2. KINETICS OF PHOTOGRAPHIC FLOW IN ARSENIDE-GALLIUM STRUCTURES WITH THE BUILT-IN POTENTIAL BARRIER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1565–1570
3. Mechanism of Amplification and Kinetics of Photocurrent in Vertical Photosemiconductors Based on the AlGaAs–GaAs Heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1842–1846
4. Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1311–1315
5. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP
   
   Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
6. INVESTIGATION OF BIPOLAR-TRANSISTORS BASED ON N-P-N ALGAAS-GAAS HETEROSTRUCTURES
   
   Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985),  1224–1227
7. Study of GaAs-Based Vertical Field Controlled Phototransistors. Mechanism of Amplification and Kinetics of Photocurrent
   
   Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1731–1735
8. Study of Intrinsic Photoconduction in InP and InGaAs Epitaxial Layers
   
   Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1460–1463
9. Study of Injection Efficiency of $p{-}n$ Junctions Based on Lightly Doped GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  167–169
10. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
11. Время жизни неравновесных носителей заряда в слабо легированных эпитаксиальных слоях GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1953–1956
12. Высокоэффективный фотодетектор для ультрафиолетового излучения
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519