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Publications in Math-Net.Ru
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Current–voltage characteristics of power diode structures with strong asymmetry of emitters injection ability
Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 524–532
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High-power Schottky diodes with a negative-differential-resistance portion in the I–V characteristic
Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 75–82
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S-shaped I – V characteristics of high-power Schottky diodes at high current densities
Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 470–477
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Multidimensional $dU/dt$ effect in high-power thyristors
Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 69–73
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Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures
Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1544–1550
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Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1125–1130
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On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects
Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 830–834
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Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 234–239
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High-voltage silicon-carbide thyristor with an $n$-type blocking base
Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 408–414
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Оценка роли электронно-дырочного рассеяния в переносе носителей
заряда в многослойных арсенид-галлиевых структурах
Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1668–1670
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О соотношении подвижностей носителей заряда в полупроводниках
$n$- и $p$-типа
Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1658–1663
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EFFECT OF THE COMPLETE ENTRAPPING OF NONMAJOR DISCHARGE CARRIERS BY
MAJOR CARRIERS AND ITS INFLUENCE ON PROPERTIES OF MULTILAYERED
SEMICONDUCTOR STRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 56:9 (1986), 1827–1829
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Effect of Radiation-Induced Defects on Current-Voltage Characteristic of Silicon Multilayer Structures
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 532–534
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О соотношении Эйнштейна в полупроводниках в условиях сильного
электронно-дырочного рассеяния
Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1293–1296
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TRANSITION PROCESS OF THE P-N TRANSITION DIFFUSION SWITCHING
Zhurnal Tekhnicheskoi Fiziki, 53:1 (1983), 189–191
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Исследование влияния оже-рекомбинации на вольтамперную характеристику
кремниевых многослойных структур
Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 474–478
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