Filaretova G M

Publications in Math-Net.Ru

1. Спонтанная электролюминесценция в гетеропереходах II типа на основе GaInAsSb/GaSb (${\lambda=2.5}$ мкм, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1373–1377
2. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
3. HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M, ZETA=4-PERCENT, T=300-K)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988),  845–849
4. CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988),  389–393
5. Spectral Photosensitivity of Au${-}p$-InAs Schottky Diodes
   
   Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  903–905
6. Nonclassical Thermoinjection Current in InAsSbP/lnAs $p{-}n$ Structures
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  762–765
7. On the Lifetimes of Charge Carriers in Zn- and Mn-Doped In$_{1-x}$Ga$_{x}$As Solid Solutions
   
   Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  537–538
8. Effect of a Magnetic Field on Photoeffect of Schottky Diodes Based on $p$-Type InAs
   
   Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1119–1122
9. Schottky Diodes Based on Compensated $p$-Type InP
   
   Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  600–603
10. Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  545–547
11. Продольный фотоэффект в диодах Шоттки Au/$n$-InP с промежуточным слоем
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  2084–2086
12. Усиление фототока в диодных структурах Au/$n$-InP$\langle\text{Fe}\rangle$
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1991–1994
13. Структура металл–полупроводник на основе $p$-InAs
    
    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  991–996