Svetlokuzev A E

Publications in Math-Net.Ru

1. Оже-рекомбинация и разогрев носителей при высоком уровне фотовозбуждения квантово-размерных гетероструктур InGaAsP/InP (${\lambda=1.3}$ мкм) и InGaAsP/GaAs (${\lambda=0.85}$ мкм)
   
   Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  657–663
2. Photoluminescent Studies of InGaAsP/InP Heterostructures with Active Region of $40\div 1000$ ÅThickness
   
   Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1217–1222
3. Quantum-Dimensional Effects in Luminescence Spectra of Liquid-Phase InGaAsP/InP Heterostructures with Active Region of 230$-$60 ÅThickness
   
   Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  437–441
4. INVESTIGATION OF THE ELECTRON MOTION ANISOTROPY IN THE LOW-PRESSUE VOLUME HIGH-FREQUENCY DISCHARGE PLASMA
   
   Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986),  1091–1099
5. X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å
   
   Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2206–2211
6. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712
7. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162