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Publications in Math-Net.Ru
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Study of Electronic Structure of Isoelectronic Impurities in Silicon. C, Ge Atoms and Their Complexes with Vacancies
Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1837–1841
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HETEROGENEITY IN THE SMOOTH AND DEVELOPED ELECTRODE OUTCOME IN
LOW-VOLTAGE DISCHARGE PLASMA
Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1118–1124
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Relaxation of Split-Bond Local Environment in Amorphous Silicon
Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 952–953
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Relaxation of vacancy local structure saturated with hydrogen in silicon
Fizika Tverdogo Tela, 27:1 (1985), 285–287
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Calculation
of the Effect of Disorder on
Amorphous-Silicon Optical Constants
Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1892–1893
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Calculation of Variations of Optical Parameters
and Electron Structure under Amorphous-Silicon Hydrogenation
Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1889–1891
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Энергетические уровни пар фосфора и бора в аморфном кремнии
Fizika i Tekhnika Poluprovodnikov, 17:11 (1983), 2088–2090
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Влияние водорода на оборванные связи в кремнии
Fizika i Tekhnika Poluprovodnikov, 17:10 (1983), 1859–1861
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