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Publications in Math-Net.Ru
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CONDUCTING OF DIRECT SILICON FUSION UNDER NON-DUST-FREE AIR MEDIA
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:17 (1990), 61–65
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STRAIGHT-LINE OF DIODES PREPARED BY THE SDB (SILICON TO SILICON DIRECT
BONDING) METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 6–9
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FORMING OF R-P TRANSITIONS BY THE SILICON TO SILICON DIRECT BONDING
METHOD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989), 59–63
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PASSIVATING PROPERTIES OF SILICON-OXIDES APPLIED ON THE SURFACE OF
SILICON HIGH-VOLTAGE P-N TRANSITIONS BY THE CATHODE-REACTIVE SPUTTERING
Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988), 132–135
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SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE
HIGHER-THAN-20-KV
Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 972–975
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OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER
SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN
BASIC FIELDS
Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987), 1925–1929
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POTENTIALITY OF PREPARATION OF LOW-OMHIM NEITRON-ALLOYED SILICON ON THE
RBMK-1000 REACTOR
Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987), 1127–1129
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NEUTRON-ALLOYED HIGH-RESISTANT SILICON (NAS) - PRODUCTION AND PROPERTIES
Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1174–1179
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Effect of Deep Levels on Breakdown Voltage of Diodes
Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 2122–2125
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HEAVY-CURRENT MICROSECOND THYRISTOR COMMUTATOR CONTROLLED BY
LIGHT-PULSES
Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985), 1570–1575
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POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON
FOR HIGH-POWER SEMICONDUCTOR-DEVICES
Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 917–928
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THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY
THE CHOKHRALSKII METHOD
Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984), 207–208
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SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON,
CONTAINING RARE-EARTH ELEMENTS
Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984), 880–882
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