Il'ichev E A

Publications in Math-Net.Ru

1. Diamond photocathodes as field-emission electrodes for vacuum microelectronics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021),  3–6
2. Characteristics of solar-blind electron-optical converters with diamond photocathodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021),  3–6
3. Studying the transparency of graphene for low-energy electrons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  94–102
4. The photoemissive cell of a vacuum ultraviolet radiation detector array
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  48–55
5. Паразитное управление по подложке в полевых транзисторах на арсениде галлия
   
   Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  794–800
6. Частотная дисперсия крутизны в полевых транзисторах на основе $\delta$-легированных структур
   
   Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1870–1876
7. Температурная зависимость эффекта управления транзистором через полуизолирующую подложку в интегральных схемах на арсениде галлия
   
   Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1667–1670
8. EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  78–80
9. MECHANISMS OF PARASITIC CONTROL ON SUBSTRATE IN GAAS FIELD SCHOTTKY TRANSISTORS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991),  36–38
10. Физическая модель эффекта управления полевым транзистором через полуизолирующую подложку
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2111–2116
11. Гетеропереход $n$-GaAs$-$ZnS в МДП приборах. II. Транзисторы с изолированным затвором
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  978–981
12. Гетеропереход $n$-GaAs$-$ZnS в МДП приборах. I. Электрофизические свойства гетероперехода
    
    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  788–794
13. CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2245–2247
14. Modulation of Negative Space Charge in the Insulator–Semiconductor Structures Produced in a GaAs$-$AlAs System
    
    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1782–1786
15. Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1565–1571
16. Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  757–759
17. Electrophysical Properties of Ga$_{1-x}$Al$_x$As Solid-Solution Insulating Layers Produced by MOS Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  594–602
18. FIELD TRANSISTOR WITH INSULATED SEALS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  420–422