Gerasimov A B

Publications in Math-Net.Ru

1. О механизмах перестройки комплексов в полупроводниках
   
   Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  920–922
2. On the Dependence of Annealing Temperature of Impurity Atom–Vacancy Defects on the Type of Impurity
   
   Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  1980–1983
3. Effect of Atom-Lattice Bond Energy on the Kinetics of Radiation-Induced Defect Annealing in $p$-Type Germanium
   
   Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  794–798
4. On the Mechanism of the Effect of Impurity Type and Concentration on Annealing Kinetics in Irradiated Germanium
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  641–644
5. Variational Feinman method calculation of shallow and deep impurity states in $\mathrm{Ge}$ and $\mathrm{Si}$
   
   Fizika Tverdogo Tela, 25:3 (1983),  746–750