Astrova Ekaterina Vladimirovna

Publications in Math-Net.Ru

1. Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries
   
   Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1381–1392
2. Formation of silicon nanoclusters upon disproportionation of silicon monoxide
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  373–387
3. Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  753–765
4. Impedance spectroscopy of porous silicon and silicon-carbon anodes produced by sintering
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  310–318
5. The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  14–18
6. Negative electrodes for lithium-ion batteries obtained by photoanodization of solar-grade silicon
   
   Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  711–716
7. Formation of porous silicon by nanopowder sintering
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  540–549
8. Photoanodization of $n$-Si in the presence of hydrogen peroxide: voltage dependence
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  119–131
9. Electrochemical amorphization as a method to increase the rate capability of crystalline silicon anodes for lithium-ion batteries
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019),  16–20
10. Fluorocarbon carbonization of nanocrystalline silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  29–32
11. Influence of hydrogen peroxide on the photoanodization of $n$-Si in the breakdown mode
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1614–1624
12. Formation of macropores in $n$-Si upon anodization in an organic electrolyte
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  414–430
13. Characteristic properties of macroporous silicon sintering in an argon atmosphere
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1213–1222
14. High-temperature annealing of macroporous silicon in an inert-gas flow
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1202–1212
15. Anodes for Li-ion batteries based on $p$-Si with self-organized macropores
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  79–88
16. Electrochemical lithiation of silicon with varied crystallographic orientation
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  979–986
17. Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  279–286
18. NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER SOLID-PHASE DIRECT SILICON BONDING
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  51–56
19. Влияние изовалентного легирования индием на свойства эпитаксиальных слоев арсенида галлия, выращенного из газовой фазы
    
    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  898–903
20. Новый способ обработки спектров DLTS
    
    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  549–552
21. HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  1–4
22. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
23. Effect of Deep Levels on Breakdown Voltage of Diodes
    
    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2122–2125
24. Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  683–686
25. Study of Thermal Defects in High-Resistance $n$-Type Si
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1709–1711
26. Effect of Series Resistance of a Diode on Unsteady Capacitance Measurements of Deep-Level Parameters
    
    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1382–1385
27. Capacitance Measurements of Deep-Impurity Distribution Profile and Surface Concentration in Thin Doped Layers
    
    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1375–1381
28. Capacitance and Photoelectric Spectroscopy of Thallium Levels in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1273–1276
29. Photoconduction of Selenium-Doped Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  919–922
30. Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  917–919
31. Energy Levels of Selenium in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  597–600