Antonishkis N Yu

Publications in Math-Net.Ru

1. Квантово-размерные InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения (${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1031–1034
2. POWER CONTINUOUS INGAASP/GAAS HETEROLASER WITH THE DIELECTRIC MIRROR (IPOR=100A/CM2,D=1.1WATT,EFFICIENCY=66-PERCENT,T=10-DEGREES-C
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  699–702
3. Low-Threshold Quantum-Dimensional InGaAsP/GaAs Double-Heterostructure Lasers of Separate Limitation Produced by Liquid Epitaxy (${\lambda=0.86}$ $\mu m$, ${I_{\text{п}}=90\,\text{A/cm}^{2}}$, ${L=\infty}$; ${I_{\text{п}}=165\,\text{A/cm}^{2}}$, ${L=1150}$ $\mu m$, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1501–1503
4. Quantum-Dimensional Effects in Liquid-Phase InGaAsP/GaAs Heterostructures with Active-Ran Thickness between 40 and 300 Å
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  178–181
5. Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  162–164
6. Photoluminescence of InGaAsP/GaAs Quantum-Dimensional Heterostructures Produced by the Method of Liquid Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2145–2149
7. Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  708–712