Slepnev Yu V

Publications in Math-Net.Ru

1. Множественная полосковая структура с квазиодномерным электронным энергетическим спектром
   
   Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1521–1528
2. RESONANCE TUNNELING OF ELECTRONS IN GAAS-ALAS-BASED 2-BARRIER STRUCTURE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  12–15
3. RESONANCE TUNNELING IN 2-BARRIER STRUCTURE DIODES ON SEMI-INSULATING SUBSTRATE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  76–78
4. NEW EPITAXIAL STRUCTURE FOR ARSENIDE-GALLIUM DEVICES ON SILICON SUBLAYERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:11 (1990),  48–52
5. CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS METHOD
   
   Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2245–2247
6. Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method
   
   Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1565–1571
7. Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  757–759
8. FIELD TRANSISTOR WITH INSULATED SEALS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  420–422