Shusha V V

Publications in Math-Net.Ru

1. Рекомбинация носителей заряда в термообработанном Si с различными типами ростовых микродефектов
   
   Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  176–180
2. Особенности образования рекомбинационных центров при облучении бездислокационного $n$-Si
   
   Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  885–887
3. Characteristic Properties of the Annealing of Recombination Centers in Neutron-Doped Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  1974–1977
4. Characteristic Properties of Radiation-Defect Accumulation in $p$-Type High-Resistance Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1894–1897
5. Recombination Properties of Radiation-Induced Defects in Transniutationally Doped Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  964–967
6. Recombination Activity of Dislocations in Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  767–770