Kolomoets V V

Publications in Math-Net.Ru

1. Переход металл$-$диэлектрик в $n$-Si$\langle$P, Sb$\rangle$
   
   Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  179–180
2. Переход от металлической проводимости к активационной в одноосно деформированном $n$-$\text{Ge}\langle\text{Sb}\rangle$
   
   Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2244–2245
3. Effect of Strong Uniaxial Elastic Deformations on the Impurity-Band Conduction in $n$-Туре Ge$\langle$Sb$\rangle$
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1477–1479
4. Mobility Anisotropy and Deformation Potentials of Germanium Valence Band under Strong Uniaxial Deformation
   
   Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2112–2115
5. Mechanisms of Tensoeffects in $n$-Туре Ge in the Region of Mixed Conduction
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1902–1904
6. Piezoresistance Related with Bending of Conduction-Band Bottom Energy Relief of $n$-Type Si Crystals Elastically Deformed in the $\langle111\rangle$ Direction
   
   Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  770–773
7. Mechanisms of Piezoresistance in $n$-Type Ge Heavy Doped Crystals at 4.2 К
   
   Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1898–1899
8. Piezoresistance and Hall Effect of Heavily Doped $n$-Type Si Crystals
   
   Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1768–1770
9. Piezoresistance of $n$-Type Si Degenerate Crystals along and across the Axis of Deformation
   
   Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1411–1413
10. Разогрев электронов в $L$- и $X$-долинах $n$-Ge
    
    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1677–1678
11. Энергия ионизации примесных уровней Sb в Ge, связанных с долинами $\langle100\rangle$ $c$-зоны
    
    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  370–371