Tikunov A V

Publications in Math-Net.Ru

1. Влияние насыщения усиления на пороговые характеристики квантово-размерных InGaAsP/GaAs-гетеролазеров
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1035–1039
2. Квантово-размерные InGaAsP/GaAs (${\lambda=0.86\div0.78}$ мкм) лазеры раздельного ограничения (${J_{\text{п}}=100\,\text{А/см}^{2}}$, КПД${}=59$%)
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1031–1034
3. Low-Threshold Quantum-Dimensional InGaAsP/GaAs Double-Heterostructure Lasers of Separate Limitation Produced by Liquid Epitaxy (${\lambda=0.86}$ $\mu m$, ${I_{\text{п}}=90\,\text{A/cm}^{2}}$, ${L=\infty}$; ${I_{\text{п}}=165\,\text{A/cm}^{2}}$, ${L=1150}$ $\mu m$, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1501–1503
4. Influence of Amplification Saturation and Quantum-Dimensional Effects on Threshold Characteristics of Lasers with Superthin Active Regions
   
   Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1085–1094
5. Quantum-Dimensional InGaAsP/GaAs Separate-Limitation Double-Heterostructure Lasers Produced by Liquid-Epitaxy Method (${\lambda=0.79}\,\mu m,$ ${I_{\text{п}}=124\,\text{A/cm}^{2}}$, ${T=300}$ K)
   
   Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  162–164
6. Visible $In\,Ga\,As\,P/Ga\,As\,P$ separate confinement lasers, manufactured by the liquid epitaxy-method ($\lambda=0.65\div0.67$ mu-m, $I_n=3\div0.8\,\text{kA}/\text{cm}^{2}$; $P=5$ mVt, $\lambda=0.665$ mu-m, $T=300$ K)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  372–374
7. $0.677 \mu m$ – Continuous Injection InGaAsP/GaAsP DH Laser with Selective Limitation Produced by Liquid Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1115–1118
8. Continuous Separately-Limited Laser on InGaAsP/GaAs Double Heterostructures Grown by Liquid Epitay of 77 mWt Power (${T=300}$ K, ${\lambda=0.87}$ $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  136–138
9. Separate-confinement $Al\,Ga\,As/Ga\,As$ heterolasers obtained by the modified method of liquid epitaxy ($I_{\text{p}}=260$ A/cm$^{2}$, $\lambda= 0.86-0.83\,\mu m$, $T= 300$ K)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985),  1409–1413
10. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
11. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
12. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758