Raihshtein V I

Publications in Math-Net.Ru

1. Влияние дислокаций на распределение глубоких центров в полуизолирующем GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  44–48
2. New method for investigation of microheterogeneity of local centers in high-ohmic semiconductor-materials using the REM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:7 (1987),  385–388
3. On the Determination of Deep-Center Parameters in High-Resistance Semiconductors by Photoelectric Relaxation Spectroscopy of Deep Levels
   
   Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1428–1432
4. Absorption of Energy Quanta Less than Optical Energy of Impurity Ionization in Manganese-Doped Indium Phoshidae
   
   Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1763–1767
5. Новый тип примесных дефектов в полуизолирующем арсениде галлия
   
   Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1363–1366