Publications in Math-Net.Ru
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NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION
SANDWICH-METHOD GROWTH IN VACUUM
Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990), 33–37
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SIC(SC)-BASED INJECTION-TRANSIT STRUCTURE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989), 43–46
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Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum
Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1685–1689
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Origination of structural ruptures in epitaxial layers of silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 641–645
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Effect of Growth Conditions on Thermal Stability of Defect Luminescence with D$_1$ Spectrum in Neutron-Irpadiated
$6H$-SiC
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2153–2158
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Origination of Defect Luminescence with D$_{1}$ Spectrum in $6H$-SiC under Generation of Excess Carbon Vacancies
Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1433–1437
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