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Publications in Math-Net.Ru
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Amorphous films of ternary zinc and tin oxides for transparent electronics
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 73–80
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STUDY OF FUSION AND CRYSTALLIZATION OF ION-IMPLANTED SILICON EFFECTED BY
POWERFUL NONCOHERENT EMISSION
Zhurnal Tekhnicheskoi Fiziki, 60:12 (1990), 131–134
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LOCAL SURFACE MELTING OF ION-IMPLANTED SILICON
Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989), 181–183
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Электронно-механический резонанс на глубоких центрах
в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия
Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 897–899
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CONTROL OF PERIOD OF SURFACE RELIEF OF CONDENSED MEDIA
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:14 (1989), 48–52
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FORMATION OF SURFACE PERIODIC STRUCTURES UNDER THE NONCOHERENT EMISSION
Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:10 (1989), 55–59
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Эффекты электрон-фононного взаимодействия в примесной
фотопроводимости $n\text{-GaP}\langle\text{Ni}\rangle$
Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 485–488
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Observation of Electron-Mechanical Resonance on Deep Levels in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by
Iron Ions
Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1335–1336
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Dielectric Relaxation Related with Deep Levels in High-Resistance Semiconductors
Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2230–2233
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Internal Friction in A$^{\text{III}}$B$^{\text{V}}$ Semiconductors Implanted by Boron Ions
Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 913–915
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Internal friction due to deep levels in polar semiconductors
Fizika Tverdogo Tela, 27:7 (1985), 2081–2085
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Internal friction in semi-insulated $\mathrm{GaAs}$
Fizika Tverdogo Tela, 26:7 (1984), 2228–2229
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Many-phonon light absorption by deep charged impurity centers
Fizika Tverdogo Tela, 25:9 (1983), 2787–2789
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Состояние примесных атомов
Сr и Со в GaP
Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 1149–1151
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