Smol'skii O V

Publications in Math-Net.Ru

1. PREPARATION OF Y-BA-CU-O HTSC-FILMS ON SI BY THE MOLECULAR-BEAM EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:20 (1992),  85–89
2. EVOLUTION OF THE (OO)-REFLEX OF THE RFED PICTURE AT THE INITIAL-STAGES OF GAAS(001) MBE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  41–46
3. Low-threshold injection heterolasers with electric limits developed by the pulse laser effect
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:15 (1987),  913–918
4. Raman Scattering in Gallium Arsenide Crystals Exposed to Subnanosecond Laser Pulses
   
   Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  252–256
5. Dynamics of reflection coefficients of crystal $Si$ and $Ga\,As$ induced by picosecond laser-pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  761–765
6. Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985),  669–671
7. STANDING X-RAY WAVE TECHNIQUE IN THE INVESTIGATION OF THE GALLIUM-ARSENIDE LASER AMORPHISM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984),  1402–1405
8. LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE SUBNANOSECOND LASER-PULSE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1281–1286
9. Новый фазовый переход в SiC и GaAs под действием пикосекундных лазерных импульсов
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983),  1373–1376
10. О возможностях метода фотолюминесценции в исследовании лазерной аморфизации арсенида галлия
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:21 (1983),  1298–1301
11. Аморфизация монокристаллического арсенида галлия под действием пикосекундных световых импульсов
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  897–900
12. Эпитаксиальная кристаллизация напыленных слоев кремния на подложках GaP в условиях интерференционного лазерного отжига
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  850–853