Rehviashvili D N

Publications in Math-Net.Ru

1. Диоды Ганна на основе гетероструктуры $n$-InGaAs$/n^{+}$-InP
   
   Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  611–613
2. In$_{0.53}$Ga$_{0.47}$As/In$_{0.88}$Ga$_{0.12}$As$_{0.23}$P$_{0.77}$-гетероструктуры с двумерным электронным газом
   
   Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  908–912
3. 2-DIMENSIONAL ELECTRON-GAS IN IN0.88GA0.12AS0.23P0.77/IN0.53GA0.47AS HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  47–50
4. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
5. Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures
   
   Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1498–1501
6. IR Absorption of Gallium Arsenide Irradiated at 77 K
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  930–932
7. Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1059–1062