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Publications in Math-Net.Ru
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Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 928–931
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Silicon light-emitting diodes with luminescence from (113) defects
Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 580–584
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Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440
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Dislocation-related photoluminescence in silicon implanted with germanium ions
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 165–168
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Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164
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Defect structure of GaAs layers implanted with nitrogen ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30
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The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50
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Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1182–1184
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Dislocation-related photoluminescence in silicon implanted with fluorine ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20
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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
Fizika Tverdogo Tela, 58:12 (2016), 2411–2414
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Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 254–258
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Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 250–253
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Si:Si LEDs with room-temperature dislocation-related luminescence
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 241–244
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Investigation of silicon by diffuse gamma-ray and X-ray scattering
Fizika Tverdogo Tela, 34:8 (1992), 2548–2554
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ELIMINATION OF SWIRL-DEFECTS DURING THERMAL-TREATMENT OF CRUCIBLELESS
SILICON PLATES IN CHLORO-CONTAINING ATMOSPHERE
Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985), 1457–1459
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