Publications in Math-Net.Ru
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Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1714–1717
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Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1244–1249
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X-ray study of the superstructure in heavily doped porous indium phosphide
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 89–92
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Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 699–703
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Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 611–614
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INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP
Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985), 1566–1569
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