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Publications in Math-Net.Ru
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Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373
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Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions
Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1244–1248
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Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 195–201
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Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 856–861
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Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 651–658
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Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 73–78
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Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 669–671
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Cathodoluminescence of SiC Ion-Doped by Aland Ar
Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 700–703
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