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Publications in Math-Net.Ru
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Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions
Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 217–223
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Raman scattering in InSb spherical nanocrystals ion-synthesized in silicon-oxide films
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 502–507
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Bonding energy of silicon and sapphire wafers at elevated temperatures of joining
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 65–69
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Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1589–1596
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Positive charge in SOS heterostructures with interlayer silicon oxide
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1220–1227
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Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 643–649
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Crystalline-amorphous phase transition in heavily doped silicon
Fizika Tverdogo Tela, 28:10 (1986), 3134–3136
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