Panteleev V A

Publications in Math-Net.Ru

1. Electrically inactive fraction of the shallow impurity in silicon
   
   Fizika Tverdogo Tela, 29:10 (1987),  3072–3076
2. Defect interaction in the phosphorus diffusion in silicon
   
   Fizika Tverdogo Tela, 28:10 (1986),  3226–3228
3. Migration mechanism of amphoteric impurities in $\mathrm{A}_{3}\mathrm{B}_{5}$ compounds
   
   Fizika Tverdogo Tela, 27:9 (1985),  2568–2572
4. Uniform-distribution instability of displacive charged impurity in semiconductors
   
   Fizika Tverdogo Tela, 27:8 (1985),  2282–2285
5. Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing
   
   Fizika Tverdogo Tela, 27:1 (1985),  274–277
6. Effects of intrinsic elastic stresses and phonon spectrum distortions on defect-formation and diffusion in semiconductors
   
   Fizika Tverdogo Tela, 27:1 (1985),  126–132
7. Atom jump activation energy to next neighbor coordination in semiconductors
   
   Fizika Tverdogo Tela, 26:5 (1984),  1277–1280
8. Intrinsic electric field effect on diffusion of fifth group elements in silicon
   
   Fizika Tverdogo Tela, 26:1 (1984),  60–64
9. Microkinetics of two-component diffusion in semiconductors
   
   Fizika Tverdogo Tela, 25:10 (1983),  3132–3137
10. Microscopic analysis of the elastic stress effect on displacive impurity atom migration in silicon
    
    Fizika Tverdogo Tela, 25:10 (1983),  2930–2935