Okulich V I

Publications in Math-Net.Ru

1. Calculating silicon-amorphization doses under medium-energy light-ion irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  771–777
2. Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020),  24–27
3. Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  967–972
4. Defect interaction in the phosphorus diffusion in silicon
   
   Fizika Tverdogo Tela, 28:10 (1986),  3226–3228
5. Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing
   
   Fizika Tverdogo Tela, 27:1 (1985),  274–277