Publications in Math-Net.Ru
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Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
Nanosystems: Physics, Chemistry, Mathematics, 13:2 (2022), 148–155
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The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 26–29
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Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 75–78
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Simulation of DIBL effect in 25 nm SOIFinFET with the different body shapes
Nanosystems: Physics, Chemistry, Mathematics, 8:1 (2017), 71–74
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The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat
Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015), 837–842
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