Lebedev Sergei Pavlovich

Publications in Math-Net.Ru

1. Formation of iron silicides under graphene grown on the silicon carbide surface
   
   Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
2. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide
   
   Fizika Tverdogo Tela, 62:3 (2020),  462–471
3. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
4. Terahertz near-field response in graphene ribbons
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
5. Studying the sensitivity of graphene for biosensor applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
6. Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum
   
   Fizika Tverdogo Tela, 61:10 (2019),  1978–1984
7. Cobalt intercalation of graphene on silicon carbide
   
   Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
8. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films
   
   Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
9. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
10. Field effect in monolayer graphene associated with the formation of graphene–water interface
    
    Fizika Tverdogo Tela, 60:12 (2018),  2474–2477
11. Intercalation of iron atoms under graphene formed on silicon carbide
    
    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
12. Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum
    
    Fizika Tverdogo Tela, 60:7 (2018),  1403–1408
13. Graphene on silicon carbide as a basis for gas- and biosensor applications
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
14. Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1512–1517
15. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
16. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
17. Local anodic oxidation of graphene layers on SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018),  34–40
18. Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide
    
    Fizika Tverdogo Tela, 59:10 (2017),  2063–2065
19. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
20. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
21. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
22. Transport properties of graphene in the region of its interface with water surface
    
    Fizika Tverdogo Tela, 58:7 (2016),  1432–1435
23. Supersensitive graphene-based gas sensor
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  135–139
24. Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  967–972
25. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71


26. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383