Eliseyev Il'ya Aleksandrovich

Publications in Math-Net.Ru

1. Локальная диагностика спиновых дефектов в облученных SiC-диодах Шоттки
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024),  367–373
2. Formation of iron silicides under graphene grown on the silicon carbide surface
   
   Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
3. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide
   
   Fizika Tverdogo Tela, 62:3 (2020),  462–471
4. Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1397
5. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
6. A study of the photoresponse in graphene produced by chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
7. Cobalt intercalation of graphene on silicon carbide
   
   Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
8. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films
   
   Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
9. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
10. Intercalation of iron atoms under graphene formed on silicon carbide
    
    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
11. Graphene on silicon carbide as a basis for gas- and biosensor applications
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
12. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
13. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
14. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72


15. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383