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Publications in Math-Net.Ru
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Magnetic and photocatalytic properties of BiFeO$_3$ nanoparticles formed during the heat treatment of hydroxides coprecipitated in a microreactor with intense swirling flows
Nanosystems: Physics, Chemistry, Mathematics, 15:3 (2024), 369–379
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Pyrochlore phase in the Bi$_2$O$_3$–Fe$_2$O$_3$–WO$_3$–(H$_2$O) system: its stability field in the low-temperature region of the phase diagram and thermal stability
Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024), 240–254
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Synthesis under hydrothermal conditions and structural transformations of nanocrystals in the LaPO$_4$–YPO$_4$–(H$_2$O) system
Nanosystems: Physics, Chemistry, Mathematics, 14:6 (2023), 660–671
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Agglomeration of magnetite nanoparticles with citrate shell in an aqueous magnetic fluid
Nanosystems: Physics, Chemistry, Mathematics, 14:3 (2023), 334–341
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Influence of using different types of microreactors on the formation of nanocrystalline BiFeO$_3$
Nanosystems: Physics, Chemistry, Mathematics, 14:1 (2023), 120–126
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Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017
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Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group
Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2139–2142
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Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1112–1116
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1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1088–1096
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Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1079–1087
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Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765
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Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137
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The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30
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The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 14–18
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Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1592–1597
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Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties
Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 938–947
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Spontaneous emission and lasing of a two-wavelength quantum-cascade laser
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 365–369
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On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 273–276
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High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 48–51
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Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 42–45
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Lasing in 9.6-$\mu$m quantum cascade lasers
Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1559–1563
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Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1131–1136
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Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 597–602
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Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 57–62
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Emission regimes of 1.06 $\mu$m spectral bandwidth two-sectional lasers with quantum dot based active layer
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018), 30–39
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Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 16–23
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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1484–1488
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On the delta-type doping of GaAs-based heterostructures with manganese compounds
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1189–1195
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InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1146–1150
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InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 704–710
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Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280
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Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017), 64–71
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Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 624–627
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Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016), 70–79
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InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 79–84
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Crystallization behavior and morphological features of YFeO$_3$ nanocrystallites obtainedby glycine-nitrate combustion
Nanosystems: Physics, Chemistry, Mathematics, 6:6 (2015), 866–874
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Mechanical properties of nanoscrolls based on Mg$_3$Si$_2$O$_5$(OH)$_4$
Nanosystems: Physics, Chemistry, Mathematics, 2:2 (2011), 48–57
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