Aleksandrov O V

Publications in Math-Net.Ru

1. Latent accumulation of surface states in MOS structures after exposure to ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  559–563
2. The effect of the ionizing radiation intensity on the response of MOS structures
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  152–158
3. Dispersive transport of hydrogen in MOS structures after exposure to ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1029–1033
4. Model of the effect of the gate bias on MOS structures under ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  189–194
5. Model of the negative-bias temperature instability of $p$-MOS transistors
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  181–188
6. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
7. Charge accumulation in MOS structures with a polysilicon gate under tunnel injection
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1625–1630
8. Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  637–642
9. Influence of traps in silicon dioxide on the breakdown of MOS structures
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1105–1109
10. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  807–810
11. Kinetics of phosphorus solid solution decomposition in diffused $\mathrm{Si}$ layers
    
    Fizika Tverdogo Tela, 31:10 (1989),  182–188
12. Low temperature structural instability of the high $T_{c}$ superconductor $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7-x}$
    
    Fizika Tverdogo Tela, 30:7 (1988),  2052–2057
13. Complex-formation at phosphorus diffusion into silicon
    
    Fizika Tverdogo Tela, 26:2 (1984),  632–634