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Varankin P V
Publications in Math-Net.Ru
Structural and compositional rearrangement in
$\mathrm{SiC}$
initiated by the ion implantation of gallium and high temperature annealing
Fizika Tverdogo Tela
,
30
:2 (1988),
629–632
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Steklov Math. Inst. of RAS
, 2024