Publications in Math-Net.Ru
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Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 485–492
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On a new mechanism for the realization of ohmic contacts
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 138–142
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On the ohmicity of Schottky contacts
Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 777–784
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The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 82–87
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Mechanism of carrier mobility variation under ultrasonic treatment of semiconducting solid solutions
Fizika Tverdogo Tela, 32:7 (1990), 2159–2161
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