Publications in Math-Net.Ru
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High-voltage 4$H$-SiC based avalanche diodes with a negative beve
Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 349–353
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High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194
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The effect of texturing of silicon wafer surfaces for solar photoelectric transducers on their strength properties
Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020), 1168–1174
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Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102
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4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 3–8
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Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$
Fizika Tverdogo Tela, 34:1 (1992), 326–328
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