Kazakova Alyona Evgen'evna

Publications in Math-Net.Ru

1. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
   
   Kvantovaya Elektronika, 52:9 (2022),  794–798
2. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm
   
   Kvantovaya Elektronika, 52:2 (2022),  171–173
3. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
   
   Kvantovaya Elektronika, 51:10 (2021),  912–914
4. Study of the spatial and current dynamics of optical loss in semiconductor laser heterostructures by optical probing
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  734–742
5. Cascade solar cells based on GaP/Si/Ge nanoheterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:6 (2019),  7–9
6. The effect of bismuth on the structural perfection and the luminescent properties of thin-film elastically stressed Al$_{x}$In$_{y}$Ga$_{1-x-y}$Bi$_{z}$Sb$_{1-z}$/GaSb heterostructures
   
   Fizika Tverdogo Tela, 60:7 (2018),  1277–1282
7. Thin-film In$_{x}$Al$_{y}$Ga$_{1-x-y}$As$_{z}$Sb$_{1-z}$/GaSb heterostructures grown in a temperature gradient
   
   Fizika Tverdogo Tela, 60:5 (2018),  888–896
8. AlInGaPAs/GaAs/Si heterostructures for photoelectric converters fabricated by pulsed laser deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  75–80
9. Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1426–1433