Goldman Evgenii Iosifovich

Publications in Math-Net.Ru

1. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba$_{x}$Sr$_{1-x}$TiO$_{3}$
   
   Fizika Tverdogo Tela, 63:11 (2021),  1887–1889
2. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
3. Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state
   
   Fizika Tverdogo Tela, 62:8 (2020),  1226–1231
4. Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 62:1 (2020),  121–124
5. Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  481–484
6. On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  89–92
7. Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  46–49
8. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1185–1188