Chucheva Galina Viktorovna

Publications in Math-Net.Ru

1. The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film
   
   Fizika Tverdogo Tela, 63:11 (2021),  1895–1900
2. A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer Ba$_{x}$Sr$_{1-x}$TiO$_{3}$
   
   Fizika Tverdogo Tela, 63:11 (2021),  1887–1889
3. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
4. Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state
   
   Fizika Tverdogo Tela, 62:8 (2020),  1226–1231
5. Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 62:3 (2020),  422–426
6. Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films
   
   Fizika Tverdogo Tela, 62:1 (2020),  121–124
7. Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1219–1223
8. The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films
   
   Fizika Tverdogo Tela, 61:10 (2019),  1948–1952
9. Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  481–484
10. On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  89–92
11. Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  46–49
12. The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films
    
    Fizika Tverdogo Tela, 60:5 (2018),  951–954
13. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1185–1188
14. Calculation of thermal parameters and technology of formation MPL microwave range
    
    Izv. Sarat. Univ. Physics, 13:1 (2013),  9–12
15. Voltage-capacitance characteristics of MFS-structures based on ferroelectric films
    
    Izv. Sarat. Univ. Physics, 13:1 (2013),  7–9
16. Determining parameters of planar capacitors based of thin film ferroelectric materials
    
    Izv. Sarat. Univ. Physics, 12:2 (2012),  8–11


17. Phase changes of multiferroic magnetic materials, used in external memory systems
    
    Izv. Sarat. Univ. Physics, 17:1 (2017),  33–43