Oganesyan Gagik Araratovich

Publications in Math-Net.Ru

1. “Nucleation” cracks on the surface of a silicon crystal
   
   Fizika Tverdogo Tela, 63:10 (2021),  1594–1597
2. Towards the modeling of impurity-related defects in irradiated $n$-type germanium: a challenge to theory
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1188
3. Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  45
4. Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1578
5. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
6. Radiation-produced defects in germanium: experimental data and models of defects
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1632–1646
7. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
8. Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1313–1319
9. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
10. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86