Kalentyeva Irina Leonidovna

Publications in Math-Net.Ru

1. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
   
   Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
2. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
   
   Fizika Tverdogo Tela, 63:7 (2021),  866–873
3. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
   
   Fizika Tverdogo Tela, 63:3 (2021),  346–355
4. Effect of ion irradiation on the magnetic properties of CoPt films
   
   Fizika Tverdogo Tela, 63:3 (2021),  324–332
5. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer
   
   Fizika Tverdogo Tela, 62:3 (2020),  373–380
6. Pulsed laser irradiation of GaAs-based light-emitting structures
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
7. Modifying the magnetic properties of the CoPt alloy by ion irradiation
   
   Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
8. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
9. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier
   
   Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
10. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
11. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer
    
    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
12. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
    
    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
13. Features of the selective manganese doping of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
14. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
15. GaAs structures with a gate dielectric based on aluminum-oxide layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  204–207