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Publications in Math-Net.Ru
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Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
Fizika Tverdogo Tela, 63:7 (2021), 866–873
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Comparison of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 978–988
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Doping of carbon layers grown by the pulsed laser technique
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 637–643
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Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 37–40
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Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1129–1133
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Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872
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Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806
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Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1271–1274
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On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236
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The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron
Fizika Tverdogo Tela, 60:11 (2018), 2137–2140
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X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
Fizika Tverdogo Tela, 60:3 (2018), 591–595
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Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468
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