Kriukov Ruslan Nikolaevich

Publications in Math-Net.Ru

1. Влияние концентрации вакансий кислорода на параметры резистивного переключения в мемристорных структурах на основе ZrO$_2$(Y)
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
2. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing
   
   Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
3. Ferromagnetism in GaAs structures delta-doped with Fe
   
   Fizika Tverdogo Tela, 66:9 (2024),  1535–1540
4. Galvanomagnetic properties of GaMnAs layers obtained by ion implantation: the role of Mn$^+$ ion energy
   
   Fizika Tverdogo Tela, 66:6 (2024),  871–876
5. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
6. Effect of high temperature annealing on the physicochemical properties of systems based on FeSi$_x$
   
   Fizika Tverdogo Tela, 65:3 (2023),  509–512
7. Effect of growth temperature on the physicochemical properties of low-temperature GaAs layers fabricated by pulsed laser deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  11–14
8. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
   
   Fizika Tverdogo Tela, 63:7 (2021),  866–873
9. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
10. Doping of carbon layers grown by the pulsed laser technique
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  637–643
11. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
12. Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1129–1133
13. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
14. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
15. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
16. On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1233–1236
17. The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron
    
    Fizika Tverdogo Tela, 60:11 (2018),  2137–2140
18. X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
    
    Fizika Tverdogo Tela, 60:3 (2018),  591–595
19. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
20. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
21. Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  839–844