Antonov Ivan Nikolaevich

Publications in Math-Net.Ru

1. Формирование ферромагнитных слоев GaMnAs имплантацией ионов Mn в ускорителе с вакуумно-дуговым источником
   
   Zhurnal Tekhnicheskoi Fiziki, 96:4 (2026),  770–780
2. In situ investigation of filament growth in yttria stabilized zirconia films by contact capacitance atomic force microscopy
   
   Fizika Tverdogo Tela, 67:8 (2025),  1441–1445
3. Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
4. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
5. Formation of vertical graphene on surface of the gallium-arsenide structures
   
   Fizika Tverdogo Tela, 65:4 (2023),  669–675
6. Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  5–8
7. Scanning Kelvin Probe Microscopy investigation of optically induced charge in Au nanoparticles embedded into ZrO$_2$(Y) films
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1937–1942
8. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
9. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
   
   Fizika Tverdogo Tela, 63:3 (2021),  346–355
10. Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
    
    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1474–1478
11. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
12. Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  23–26
13. The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021),  30–32
14. Resistive switching of memristors based on stabilized zirconia by complex signals
    
    Fizika Tverdogo Tela, 62:4 (2020),  556–561
15. An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1825–1829
16. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
17. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
    
    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
18. Pulsed laser irradiation of GaAs-based light-emitting structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
19. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
20. Resistive switching in memristors based on Ag/Ge/Si heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  44–46
21. Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1669–1673
22. Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
    
    Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  927–934
23. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
24. The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron
    
    Fizika Tverdogo Tela, 60:11 (2018),  2137–2140
25. X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions
    
    Fizika Tverdogo Tela, 60:3 (2018),  591–595
26. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
27. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
28. Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  470
29. Features of switching memristor structures to a high-resistance state by sawtooth pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  88–93
30. Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature
    
    Fizika Tverdogo Tela, 59:11 (2017),  2200–2202
31. Features of the selective manganese doping of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
32. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
    
    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
33. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1639–1643
34. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
35. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  78–84
36. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24
37. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  52–60
38. Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  72–79
39. The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  81–89
40. Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  62–70
41. The forming process in resistive-memory elements based on metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:19 (2014),  18–26
42. Capacitors with nonlinear characteristics based on stabilized zirconia with built-in gold nanoparticles
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  9–16
43. Resistive switching in metal-insulator-metal structures based on germanium oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:3 (2014),  12–19
44. Effect of preliminary oxidation annealing on properties of porous silicon impregnated with a tungsten-tellurite glass activated by Er and Yb
    
    Fizika Tverdogo Tela, 55:2 (2013),  265–269
45. Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  72–79
46. Effect of phosphorus ion implantation on the optical properties of thin films of germanium dioxide doped with Er$^{3+}$ and Yb$^{3+}$ ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  71–77
47. Peculiarities in the formation of gold nanoparticles by ion implantation in stabilized zirconia
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  60–65
48. The Sine-Gordon brizer stochastic dissoziation in an external fields
    
    Izv. Sarat. Univ. Physics, 8:2 (2008),  34–39