Grashchenko Aleksandr Sergeevich

Publications in Math-Net.Ru

1. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
   
   Fizika Tverdogo Tela, 63:3 (2021),  363–369
2. Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  7–10
3. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
4. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
5. Mechanical properties of epilayers of metastable $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$ phases studied by nanoindentation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  3–7
6. Coating of nanostructured profiled Si surface with a SiC layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:20 (2020),  19–22
7. Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  36–38
8. Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution
   
   Fizika Tverdogo Tela, 61:12 (2019),  2313–2315
9. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
   
   Fizika Tverdogo Tela, 61:3 (2019),  433–440
10. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
11. Growing III–V semiconductor heterostructures on SiC/Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  24–27
12. Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates
    
    Fizika Tverdogo Tela, 60:5 (2018),  851–856
13. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  651–658