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Publications in Math-Net.Ru
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Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates
Fizika Tverdogo Tela, 63:3 (2021), 363–369
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Specific features of structural stresses in InGaN/GaN nanowires
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788
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Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624
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MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35
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Directional radiation from GaAs quantum dots in AlGaAs nanowires
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 47–50
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Nonlinear bleaching of InAs nanowires in the visible range
Optics and Spectroscopy, 128:1 (2020), 128–133
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Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887
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Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35
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Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution
Fizika Tverdogo Tela, 61:3 (2019), 433–440
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Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50
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Solar cell based on core/shell nanowires
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1464–1468
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MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320
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Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307
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MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522
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The features of GaAs nanowire SEM images
Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510
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Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition
Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200
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MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529
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Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
Fizika Tverdogo Tela, 58:12 (2016), 2314–2318
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Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
Fizika Tverdogo Tela, 58:10 (2016), 1886–1889
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