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Naryshkina Valentina Grigorievna

Publications in Math-Net.Ru

  1. Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  24–27
  2. Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state

    Fizika Tverdogo Tela, 62:8 (2020),  1226–1231
  3. On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  89–92
  4. The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films

    Fizika Tverdogo Tela, 60:5 (2018),  951–954
  5. Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1185–1188


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