Publications in Math-Net.Ru
-
Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages
Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27
-
Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state
Fizika Tverdogo Tela, 62:8 (2020), 1226–1231
-
On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92
-
The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films
Fizika Tverdogo Tela, 60:5 (2018), 951–954
-
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188
© , 2024